|Publisher DOI:||10.1016/j.apsusc.2018.02.015||Title:||On the mechanism of ion-induced bending of nanostructures||Language:||English||Authors:||Ribas Gomes, Diego
Turkin, Anatoliy A.
Vainchtein, David I.
De Hosson, Jeff
|Keywords:||Focused ion beam; Nanostructure fabrication; Radiation-induced bending||Issue Date:||6-Feb-2018||Source:||Applied Surface Science 446 (): 151-159 (2018)||Abstract (english):||
This contribution concentrates on ion-induced bending phenomena which may serve as a versatile tool to manufacture nanostructured devices. In particular bending was studied in free standing Au cantilevers. The preparation and irradiation of the cantilevers were performed using a TESCAN LYRA dual beam system. Cantilevers with thicknesses ranging between 90 and 200 nm were irradiated with 30 keV Ga ions normal to the sample surface up to a maximum fluence of ∼3 × 10 20 Ga/m 2 . The bending of the cantilevers towards the incident beam is discussed in terms of local volume change due to accumulation of radiation-induced vacancies and substitutional Ga atoms in the Ga implantation layer, as well as due to accumulation of interstitial type clusters in the region beyond the Ga penetration range. A model is proposed to explain the observations, based on a set of rate equations for concentrations of point defects, i.e. vacancies, self-interstitials and implanted Ga atoms. The influence of preexisting defects is also discussed. The work shows that an in-depth understanding the ion-beam bending can play a predictive role in a quantitative control in for the micro- and nanofabrication of small-sized products.
|URI:||http://hdl.handle.net/11420/14124||ISSN:||0169-4332||Journal:||Applied surface science||Document Type:||Article|
|Appears in Collections:||Publications without fulltext|
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