Please use this identifier to cite or link to this item: https://doi.org/10.15480/882.2332
Publisher DOI: 10.5194/ars-6-205-2008
Title: Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system
Language: English
Authors: Domdey, Andreas 
Hafkemeyer, Kristian M. 
Krautschneider, Wolfgang 
Schröder, Dietmar 
Issue Date: 26-May-2008
Publisher: Copernicus Publications
Source: Advances in Radio Science (6): 205-207 (2008)
Journal or Series Name: Advances in radio science : Kleinheubacher Berichte 
Abstract (english): This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time. © Author(s) 2008.
URI: http://hdl.handle.net/11420/2928
DOI: 10.15480/882.2332
ISSN: 1684-9973
Institute: Integrierte Schaltungen E-9 
Type: (wissenschaftlicher) Artikel
License: CC BY 3.0 (Attribution) CC BY 3.0 (Attribution)
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