Publisher DOI: 10.1149/2.0091605jss
Title: Self-organized three-dimensional nanostructured architectures in bulk GaN generated by spatial modulation of doping
Language: English
Authors: Tiginyanu, Ion 
Stevens-Kalceff, Marion A. 
Sarua, Andrei 
Braniste, Tudor 
Monaico, Eduard 
Popa, Veaceslav 
Andrade, Hugo D. 
Thomas, James O. 
Raevschi, Simion 
Schulte, Karl 
Adelung, Rainer 
Issue Date: 18-Feb-2016
Publisher: ECS
Source: ECS Journal of Solid State Science and Technology 5 (5): P218-P227 (2016)
Journal or Series Name: ECS journal of solid state science and technology 
Abstract (english): Self-organized 3D nanostructured architectures including quasi-ordered concentric hexagonal structures generated during the growth of single crystalline n-GaN substrates by hydride vapor phase epitaxy (HVPE) are reported. The study of as-grown samples by using Kelvin Probe Force Microscopy shows that the formation of self-organized architectures can be attributed to fine modulation of doping related to the spatial distribution of impurities. The specific features of nanostructured architectures involved have been brought to light by using electrochemical and photoelectrochemical etching techniques which are highly sensitive to local doping. The analysis of the results shows that the formation of self-organized spatial architectures in the process of HVPE is caused by the generation of V-pits and their subsequent overgrowth accompanied by the growth in variable direction. It is demonstrated for the first time that the electrical and luminescence properties of HVPE-grown GaN are spatially modulated throughout, including islands between overgrown V-pit regions. The dependence of doping upon growth direction is confirmed by the micro-cathodoluminescence characterization of HVPE-grown pencil-like microcrystals exposing various crystallographic planes along the tip. These results are indicative of new possibilities for defect engineering in gallium nitride and for three-dimensional spatial nanostructuring of this important electronic material by controlling the growth direction.
ISSN: 2162-8777
Institute: Kunststoffe und Verbundwerkstoffe M-11 
Type: (wissenschaftlicher) Artikel
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