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Publisher DOI: 10.1088/1361-6463/aa69ae
Title: An enhanced lumped element electrical model of a double barrier memristive device
Language: English
Authors: Solan, Enver 
Dirkmann, Sven 
Hansen, Mirko 
Schröder, Dietmar 
Kohlstedt, Hermann 
Ziegler, Martin 
Mussenbrock, Thomas 
Ochs, Karlheinz 
Keywords: electrical modeling;memristive devices;memristor;nanoelectronics;neuromorphic circuits;resistive switching
Issue Date: 13-Apr-2017
Publisher: IOP Publ.
Source: Journal of Physics D: Applied Physics 19 (50): 195102 (2017-04-13)
Journal or Series Name: Journal of physics 
Abstract (english): The massive parallel approach of neuromorphic circuits leads to effective methods for solving complex problems. It has turned out that resistive switching devices with a continuous resistance range are potential candidates for such applications. These devices are memristive systems - nonlinear resistors with memory. They are fabricated in nanotechnology and hence parameter spread during fabrication may aggravate reproducible analyses. This issue makes simulation models of memristive devices worthwhile. Kinetic Monte-Carlo simulations based on a distributed model of the device can be used to understand the underlying physical and chemical phenomena. However, such simulations are very time-consuming and neither convenient for investigations of whole circuits nor for real-time applications, e.g. emulation purposes. Instead, a concentrated model of the device can be used for both fast simulations and real-time applications, respectively. We introduce an enhanced electrical model of a valence change mechanism (VCM) based double barrier memristive device (DBMD) with a continuous resistance range. This device consists of an ultra-thin memristive layer sandwiched between a tunnel barrier and a Schottky-contact. The introduced model leads to very fast simulations by using usual circuit simulation tools while maintaining physically meaningful parameters. Kinetic Monte-Carlo simulations based on a distributed model and experimental data have been utilized as references to verify the concentrated model.
DOI: 10.15480/882.2522
ISSN: 1361-6463
Institute: Integrierte Schaltungen E-9 
Type: (wissenschaftlicher) Artikel
Funded by: The financial support by the German Research Foundation (Deutsche Forschungsgemeinschaft—DFG) through FOR 2093 is gratefully acknowledged.
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