Publisher DOI: 10.1016/j.mee.2012.12.022
Title: Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistors
Language: English
Authors: Fahem, Zied 
Bauhofer, Wolfgang 
Keywords: Gate dielectric;Insulator;Organic field-effect transistors;Photo-curing;Thiol-ene
Issue Date: 21-Jan-2013
Publisher: Elsevier
Source: Microelectronic Engineering (105): 74-76 (2013)
Journal or Series Name: Microelectronic engineering 
Abstract (english): We report the synthesis and properties of fast photo-cured polymer dielectrics used as top gate insulators in organic field-effect transistors (OFETs). Two thiol functionalized compounds and a vinyl ether monomer were used to formulate thiol-ene polymers. The kinetic of the photo-curing of these formulations was determined by monitoring the curing process by FT-IR spectroscopy. Guided by measurements on metal-insulator-metal and metal-insulator-semiconductor structures, we determined the composition of the thiol-ene polymer and the optimal time of exposure to UV-irradiation to fabricate high performance poly(3-hexylthiophene)-based OFETs. We cured a mixture of a mercapto-functionalized polysiloxane produced with sol-gel process, 1,4-cyclohexanedimethanol divinyl ether and irgacure 127 in 15 s. The produced transistors have high on/off ratios of 105. The OFETs showed a field effect mobility of 10-2 cm2 V-1 s-1 and low threshold voltage of -3 V. © 2013 Elsevier Ltd. All rights reserved.
URI: http://hdl.handle.net/11420/6921
ISSN: 0167-9317
Institute: Optische und Elektronische Materialien E-12 
Type: (wissenschaftlicher) Artikel
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