|Publisher DOI:||10.1016/j.mee.2012.12.022||Title:||Thiol-ene polymer based fast photo-curable gate insulator for organic field effect transistors||Language:||English||Authors:||Fahem, Zied
|Keywords:||Gate dielectric;Insulator;Organic field-effect transistors;Photo-curing;Thiol-ene||Issue Date:||21-Jan-2013||Publisher:||Elsevier||Source:||Microelectronic Engineering (105): 74-76 (2013)||Journal or Series Name:||Microelectronic engineering||Abstract (english):||We report the synthesis and properties of fast photo-cured polymer dielectrics used as top gate insulators in organic field-effect transistors (OFETs). Two thiol functionalized compounds and a vinyl ether monomer were used to formulate thiol-ene polymers. The kinetic of the photo-curing of these formulations was determined by monitoring the curing process by FT-IR spectroscopy. Guided by measurements on metal-insulator-metal and metal-insulator-semiconductor structures, we determined the composition of the thiol-ene polymer and the optimal time of exposure to UV-irradiation to fabricate high performance poly(3-hexylthiophene)-based OFETs. We cured a mixture of a mercapto-functionalized polysiloxane produced with sol-gel process, 1,4-cyclohexanedimethanol divinyl ether and irgacure 127 in 15 s. The produced transistors have high on/off ratios of 105. The OFETs showed a field effect mobility of 10-2 cm2 V-1 s-1 and low threshold voltage of -3 V. © 2013 Elsevier Ltd. All rights reserved.||URI:||http://hdl.handle.net/11420/6921||ISSN:||0167-9317||Institute:||Optische und Elektronische Materialien E-12||Type:||(wissenschaftlicher) Artikel|
|Appears in Collections:||Publications without fulltext|
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