Zuckerstaetter, A.A.ZuckerstaetterSchloesser, T.T.SchloesserHofmann, F.F.HofmannYuwono, B.B.YuwonoGschwandtner, A.A.GschwandtnerGrassl, A.A.GrasslInnertsberger, G.G.InnertsbergerKrautschneider, WolfgangWolfgangKrautschneider2024-06-212024-06-212000In: ESSDERC 2000 : proceedings of the 30th European Solid-State Device Research Conference : Cork, Ireland, 11-13 September 2000. - [Paris?] : Frontier Group, 2000. - S. 196-19928633224869782863322482https://hdl.handle.net/11420/47972A new DRAM cell has been developed that features high signal charge and low aspect ratio of the storage capacitor. It can be fabricated based on a standard CMOS process, so that the cell can be integrated into existing technologies. This has been verified by processing of demonstrator cells that provide signal charges greater by factors than as of conventional DRAM cells.enTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringConference Paper10.1109/ESSDERC.2000.194748Conference Paper