Sutbas, BatuhanBatuhanSutbasJalli Ng, HermanHermanJalli NgWessel, JanJanWesselKölpin, AlexanderAlexanderKölpinKahmen, GerhardGerhardKahmen2021-06-082021-06-082021-05IEEE Microwave and Wireless Components Letters 31 (5): 9366489 (2021-05)http://hdl.handle.net/11420/9699This letter presents the design of a V-band low-power compact low-noise amplifier (LNA) in a 130-nm SiGe BiCMOS technology. For the low-power and low-noise requirements, transistors need to operate with low-voltage supply and low current density, which comes at the cost of lower gain per BJT stage. We use a technique to cancel the Miller capacitance in a single-stage differential amplifier and achieve high-gain, low-power, and low-noise simultaneously. The circuit topology is analyzed, and the transistor core layout and the matching network design considerations are discussed. The measured circuit shows a peak gain of 14.1 dB in a 3-dB bandwidth from 44 to 67 GHz while consuming 5.1 mW. Experimental results show an output power of 7.1 dBm at 1-dB compression with an associated power-added efficiency of 30%. The simulated noise figure is 3.3 dB at the center frequency. To the best of the authors' knowledge, the highest figure of merit among V-band LNAs based on silicon is reported.en1531-130920215497500Integrated circuitlow-noise amplifier (LNA)low-powerMiller effectmm-wavesilicon-germaniumwidebandJournal Article10.1109/LMWC.2021.3062983Other