Ribas Gomes, DiegoDiegoRibas GomesTurkin, Anatoliy A.Anatoliy A.TurkinVainchtein, David I.David I.VainchteinDe Hosson, JeffJeffDe Hosson2022-11-212022-11-212018-05-01Journal of Materials Science 53 (10): 7822-7833 (2018-05-01)http://hdl.handle.net/11420/14119Ion-induced bending phenomena were studied in free-standing nano-sized Al cantilevers with thicknesses in the range of 89–200 nm. The objective is to present a predictive and useful model for the fabrication of micro- and nano-sized specimens. Samples were irradiated in a Tescan Lyra dual beam system with 30 kV Ga+ ions normal to the sample surface up to a maximum fluence of ~ 2 × 1021 m−2. Irrespective of thickness, all samples bent initially away from the Ga+ beam; as irradiation proceeded, the bending direction was reversed. The Al cantilever bending behavior is discussed in terms of depth-dependent volume change due to implanted Ga atoms, radiation-induced point defects and interstitial clusters. A kinetic model is designed which is based on a set of rate equations for concentrations of vacancies, interstitial atoms, Ga atoms and clusters of interstitial atoms. The bending crossover is explained by the formation of sessile interstitial clusters in a zone beyond the Ga+ penetration range. Model predictions agree with our experimental findings.en0022-246120181078227833Springer Science + Business Media B.V.Allgemeines, WissenschaftJournal Article10.1007/s10853-018-2067-0Other