Dahl, DavidDavidDahlReuschel, TorstenTorstenReuschelPreibisch, JanJanPreibischDuan, XiaominXiaominDuanNdip, Ivan N.Ivan N.NdipLang, Klaus-DieterKlaus-DieterLangSchuster, ChristianChristianSchuster2020-03-052020-03-052016-12-01IEEE Transactions on Components, Packaging and Manufacturing Technology 12 (6): 7742348 1889-1898 (2016-12-01)http://hdl.handle.net/11420/5204In this paper, we present for the first time a rigorous crosstalk analysis of through silicon via (TSV) arrays consisting of several hundreds of TSVs in interposers with metallized surfaces, using the physics-based via (PBV) modeling approach for applications up to 500 GHz. The PBV modeling approach is valid for complete and almost complete metallizations of the substrate where radial wave propagation in the parallel-plate structure dominates the electromagnetic properties and is utilized with models of good accuracy for localized and propagating fields in the inhomogeneous dielectrics. The approach shows very good to good agreement of crosstalk results for frequencies up to 500 GHz in comparison to full-wave simulations and attains a speedup of at least two orders of magnitude in comparison to general-purpose simulators. The definition of a weighted power sum for total uncorrelated crosstalk is applied for all channels in the TSV array. These power sum results give more meaningful insights into the global effects of the parameter variations than single crosstalk contributions. Based on variations of several technology and design parameters of TSVs, we derive quantitative estimations of the impact of these parameters on the total crosstalk.en2156-3950201612188918983-D integrationContour integral method (CIM)CrosstalkInhomogeneous substratePhysics-based via (PBV) modelThrough silicon via (TSV)TechnikJournal Article10.1109/TCPMT.2016.2620059Other