Hajo, Ahid S.Ahid S.HajoYilmazoglu, OktayOktayYilmazogluDadgar, ArminArminDadgarKüppers, FrankoFrankoKüppersKusserow, ThomasThomasKusserow2021-06-032021-06-032020-04-29IEEE Access 8: 9081902, 84116-84122 (2020)http://hdl.handle.net/11420/9678For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and field-plate technologies were fabricated and measured with reliable characteristics. A high negative differential resistance (NDR) region was characterised for the GaN Gunn effect using side-contact technology. The I-V measurement of the THz diode showed the ohmic and the Gunn effect region with high forward current of 0.65A and high current drop of approximately 100mA for a small ring diode width w of 1.5 μm with 600 nm effective diode height h at a small threshold voltage of 8.5V. This THz diode worked stable due to good passivation as protection from electro-migration and ionisation between the electrodes as well as a better heat sink to the GaN substrate and large side-contacts. The diodes can provide for this thickness a fundamental frequency in the range of 0.3 - 0.4 THz with reliable characteristics.en2169-353620208411684122IEEEhttps://creativecommons.org/licenses/by/4.0/field-plateGallium nitridegunn diodessemiconductor structureside-contactterahertz sourceTechnikJournal Article10.15480/882.363010.1109/ACCESS.2020.299130910.15480/882.3630Journal Article