Kumar, PushpendraPushpendraKumarHuber, PatrickPatrickHuber2022-07-142022-07-142007-06-06Journal of Nanomaterials 2007: 89718 1-4 (2007-08-01)http://hdl.handle.net/11420/13143The most common fabrication technique of porous silicon (PS) is electrochemical etching of a crystalline silicon wafer in a hydrofluoric (HF) acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The control of these properties of PS was shown to depend on the HF concentration in the used electrolyte, the applied current density, and the thickness of PS. The change in pore diameter, porosity, and specific surface area of PS was investigated by measuring nitrogen sorption isotherms.en1687-4129200714PhysikJournal Article10.1155/2007/89718Other