Friesicke, ChristianChristianFriesickeQuay, RüdigerRüdigerQuayJacob, ArneArneJacob2025-02-112025-02-112014-10Conference Proceedings; EuMIC 2014 9th European Microwave Integrated Circuits Conference: 6997877, 400-403978-1-4799-5473-5978-2-87487-036-1https://hdl.handle.net/11420/54193This paper presents a comparative study of input and output second-harmonic matching applied to 0.25μm Al-GaN/GaN HEMTs on s.-i. SiC substrates. The study focuses on the technology's use at K-band, which is close to the maximum usable frequency for high-power amplifier design. Four power amplifier MMICs using different second-harmonic matching schemes are compared in terms of PAE and output power. The results show the relative improvement of power and efficiency that is gained by the inclusion of second-harmonic matching in the design but also the impact on the power/efficiency bandwidth.enGallium nitride | high power amplifiers | K-band | MMICs | satellite communicationTechnology::600: TechnologyConference Paper10.1109/EuMIC.2014.6997877Conference Paper