Zeeshan, Hafiz MuhammadHafiz MuhammadZeeshanButt, Mehwish KhalidMehwish KhalidButtWang, ShuanhuShuanhuWangRafiq, MubasharMubasharRafiqJin, KexinKexinJin2024-02-222024-02-222020-12-28Applied Physics Letters 117 (26): 251902 (2020)https://hdl.handle.net/11420/45933The junction diode as a high-voltage rectifier has a great impact within the electronic industry because of its applications. It has been synthesized accommodating two dimensional materials, [Sahatiya et al., 2D Mater. 4(2), 025053 (2017)]. Si-based p-n junctions and Si-based heterostructures in combination with complex oxides [Zhao et al., Appl. Phys. Lett. 93(25), 252110 (2008)]. In this Letter, we have synthesized the p-i-n junction using complex oxides La0.7Sr0.3MnO₃ (LSMO), LaAlO₃ (LAO), and SrTiO₃ (STO), which exhibits the rectifying behavior as Si-based heterostructures in combination with complex oxides. In addition, the light-induced weak localization effect is observed in the LSMO film. This research will further assist in the growth of the electronic industry of STO-based heterostructures.en0003-6951202026American Institut of PhysicsChemistryEngineering and Applied OperationsJournal Article10.1063/5.0027247Journal Article