Yuwono, B.B.YuwonoSchloesser, T.T.SchloesserGschwandtner, A.A.GschwandtnerInnertsberger, G.G.InnertsbergerGrassl, A.A.GrasslOlbrich, A.A.OlbrichKrautschneider, WolfgangWolfgangKrautschneider2024-06-202024-06-201999Microelectronic Engineering 48 (1): 51-54 (1999)https://hdl.handle.net/11420/47946Scaled-down MOSFETs of the 16 Gbit generation and beyond require a gate dielectric thickness less than 2 nm. Reliability of ultra thin dielectrics were investigated in DC and AC stress at room and elevated temperatures. Results showed that due to the exponential increase of the breakdown change QBD at reduced gate voltages, it can be expected that MOS transistors of the 16 Gbit generation with ultra thin dielectric gate films will meet the 10 years reliability specifications.en0167-9317199915154ElsevierTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringJournal Article10.1016/S0167-9317(99)00336-6Journal Article