Subbiah, IyappanIyappanSubbiahSüss, AndreasAndreasSüssKravchenko, AndreyAndreyKravchenkoHosticka, BedrichBedrichHostickaKrautschneider, WolfgangWolfgangKrautschneider2024-05-232024-05-2320142014 International Semiconductor Conference (CAS 2014), Sinaia, Romania, 13-15 October 2014978-1-4799-7142-8978-1-4799-3916-9978-1-4799-3917-6https://hdl.handle.net/11420/47580A novel architecture for a bandgap voltage reference is presented in this paper. The voltage reference, designed for image sensor applications, is primarily targeted for a low-noise operation along with other practical constraints such as high power supply rejection, temperature immunity and short start-up time. The analysis and operation of the circuit is discussed and the trade-offs involved in the implementation aspects are examined. The measurement results of the fabricated circuit in a 0.35-μm CMOS process show a noise voltage level of 450 nV/√Hz at 10 Hz, a temperature coefficient of 14 ppm/K and a PSRR of 52 dB.enimage sensorslow-noisesaturation-stackedTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringConference Paper10.1109/SMICND.2014.6966450Conference Paper