Duan, XiaominXiaominDuanBöttcher, MathiasMathiasBöttcherDahl, DavidDavidDahlSchuster, ChristianChristianSchusterTschoban, ChristianChristianTschobanNdip, Ivan N.Ivan N.NdipLang, Klaus-DieterKlaus-DieterLang2020-05-182020-05-182016-08-16Electronic Components and Technology Conference: 7545628 (2016-08-16)http://hdl.handle.net/11420/6165In this work, we present the high frequency extraction of electrical material properties of silicon substrates. Two methods, including the substrate integrated waveguide (SIW) based method and the planar resonator based method, are used and their consistency will be shown. For the SIW-based method, a line difference algorithm is applied for the calculation of a broadband material property with the effective width of the SIW determined experimentally. For the planar resonator based method, the material parameters are extracted at discrete resonance frequencies by comparing to full-wave simulations. The results from both methods are compared to each other and discussed with respect to their accuracy and their suitability for different substrate types. For the validation purpose, TSV transitions are designed and fabricated on the same wafers of SIWs and planar resonators, which are modelled using a full-wave electromagnetic solver together with the extracted electrical properties of the silicon wafer. The comparison of the modelling to the measurement results will be presented and the influence of the variation of substrate material properties on the high frequency TSV performance and the accuracy of TSV modelling are discussed.enMaterial characterizationSilicon resistivitySubstrate integrated waveguideThrough silicon viaConference Paper10.1109/ECTC.2016.240Other