Böscke, Tim S.Tim S.BösckeGovindarajan, S.S.GovindarajanKirsch, Paul D.Paul D.KirschHung, Pui YeePui YeeHungKrug, CristianoCristianoKrugLee, Byoung-hunByoung-hunLeeHeitmann, JohannesJohannesHeitmannSchröder, Uwe PaulUwe PaulSchröderPant, Gaurang K.Gaurang K.PantGnade, Bruce E.Bruce E.GnadeKrautschneider, WolfgangWolfgangKrautschneider2024-06-212024-06-212007-08-24Applied Physics Letters 91 (7): 072902 (2007-08-13)https://hdl.handle.net/11420/47998The authors report the relationship between Hf O2 crystalline phase and the resulting electrical properties. Crystallization of amorphous Hf O2 into the monoclinic phase led to a significant increase in leakage current and formation of local defects. Admixture of 10% Si O2 avoided formation of these defects by stabilization of the tetragonal phase, and concurrently increased the permittivity to 35. This understanding enabled fabrication of crystalline Hf O2 based metal-insulator-metal capacitors able to withstand a thermal budget of 1000 °C while optimizing capacitance equivalent thickness (<1.3 nm) at low leakage [J (1 V) < 10-7 A cm2].en0003-6951Applied physics letters20077American Institut of PhysicsTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringStabilization of higher- κ tetragonal Hf O2 by Si O2 admixture enabling thermally stable metal-insulator-metal capacitorsJournal Article10.1063/1.2771376Journal Article