Schröder, DietmarDietmarSchröder2023-11-172023-11-172011-03-01IEEE Transactions on Electron Devices 58 (3): 874-875 (2011)https://hdl.handle.net/11420/44210The goal of this correspondence is to supplement the Schottky-contact model proposed in "A Generalized Drift-Diffusion Model for Rectifying Schottky Contact Simulation," IEEE Transactions on Electron Devices, vol. 57, no. 7, July 2010, with a solid physical foundation by rigorously rederiving it from an analytical solution of Boltzmann's equation in the boundary layer. © 2010 IEEE.en0096-243020113874875IEEESchottky barrierssemiconductor device modelingElectrical Engineering, Electronic EngineeringJournal Article10.1109/TED.2010.2093902Journal Article