Schliewe, Robert RomanRobert RomanSchlieweYildirim, Faruk AltanFaruk AltanYildirimEmden, Walter vonWalter vonEmdenWitte, R.R.WitteBauhofer, WolfgangWolfgangBauhoferKrautschneider, WolfgangWolfgangKrautschneider2024-06-282024-06-282006-06-05Applied Physics Letters 88 (23): 233514 (2006-06-05)https://hdl.handle.net/11420/48122Physics-based models of organic field-effect transistors (OFETs) which can be used for computer-aided simulation of organic integrated circuits were investigated. For this purpose hybrid OFETs with poly(3-hexylthiophene-2,5-diyl) as the semiconductor were fabricated and characterized. The differential drain-source resistance reveals the need for a unified consideration of a gate-voltage-dependent mobility and of the depletion effect. We avoid neglecting the capacitance of the insulator and the semiconductor which would have otherwise introduced restrictions. The analytic modeling yields a compact static equivalent circuit diagram. © 2006 American Institute of Physics.en0003-6951200623American Institut of PhysicsTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringJournal Article10.1063/1.2211148Journal Article