Schwantes, StefanStefanSchwantesKrautschneider, WolfgangWolfgangKrautschneider2024-06-212024-06-212001In: Proceedings of the 31st European Solid-State Device Research Conference : Nuremberg, Germany, 11 - 13 September 2001. - Paris : Frontier Group, 2001.- S. 471-4742914601018https://hdl.handle.net/11420/47980Gate current through very thin gate oxides can endanger the proper functionality of CMOS circuits. For investigation of this effect, we have implemented an improved analytical model for the gate current into a circuit simulator and determined the impact of the gate current on the functionality of basic CMOS circuits. Taking into consideration the local fluctuations of the gate oxide thickness results in a revised lower limit of the nominal gate oxide thickness.enTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringConference Paper10.1109/ESSDERC.2001.195303Conference Paper