Krautschneider, WolfgangWolfgangKrautschneiderWagemann, Hans GüntherHans GüntherWagemann2024-06-182024-06-181983International journal of electronics and communications = AEÜ: Archiv fur Elektronik und Ubertragungstechnik 37 (9/10): 293-298 (1983)https://hdl.handle.net/11420/47898Kuhn's quasi-static C(V)-method has been extended to MOS transistors by considering the capacitances of the source and drain p-n junctions additionally to the MOS varactor circuit model. The width of the space charge layers w( psi //s) is calculated as a function of the surface potential psi //s and applied to the MOS capacitance as a function of the gate voltage. Capacitance behavior for different channel length is presented as a model and compared to measurement results and evaluations of energetic distributions of interface states D//i//t ( psi //s) for MOS transistor and MOS varactor on the same chip.en1434-841119839/10293298Hirzel VerlagTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringJournal ArticleJournal Article