Dahl, DavidDavidDahlDuan, XiaominXiaominDuanBeyreuther, AnneAnneBeyreutherNdip, Ivan N.Ivan N.NdipLang, Klaus-DieterKlaus-DieterLangSchuster, ChristianChristianSchuster2020-10-082020-10-0820132013 IEEE 22nd Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS) : 27 - 30 Oct. 2013, DoubleTree by Hilton Hotel, San Jose, California, USA / sponsored by the IEEE Microwave Theory and Techniques Society and the IEEE Components, Packaging and Manufacturing Technology Society. - Piscataway, NJ : IEEE, 2013. - Art.-Nr. 6703468, i.e. Seite 65-68http://hdl.handle.net/11420/7517This paper presents a first approach for the efficient modeling of Through Silicon Vias based on a Physics-Based Via model for application in silicon interposers with metallic boundaries. © 2013 IEEE.en3D interconnectsPhysics-Based Via ModelThrough Silicon ViasPhysikTechnikIngenieurwissenschaftenApplying a physics-based via model for the simulation of Through Silicon ViasConference Paper10.1109/EPEPS.2013.6703468Other