Sell, BernhardBernhardSellSänger, AnnetteAnnetteSängerKrautschneider, WolfgangWolfgangKrautschneider2024-06-242024-06-242003Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (3): 931-935 (2003)https://hdl.handle.net/11420/48014A study was performed on the interface analysis of atomic layer deposited-TiN gate electrodes on ultrathin SiO₂layers. The temperature dependence of the C-V curves was discussed and an unintended titanium-rich layer at the interface, which disappears after annealing above 800 °C was indicated. It was found by leakage current analysis that a thermal stability up to 800°C was obtained for TiN gates on ultrathin SiO₂ layers with an enhanced tunneling current as compared to simulations.en2166-274620033931935AVS Science and Technology SocietyTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringJournal Article10.1116/1.156534110.1116/1.1565341Journal Article