Seekamp, A.A.SeekampAvellán Hampe, AlejandroAlejandroAvellán HampeSchwantes, StefanStefanSchwantesKrautschneider, WolfgangWolfgangKrautschneider2024-06-242024-06-242003-10-01International Journal of Electronics 90 (10): 607-612 (2003)https://hdl.handle.net/11420/48024The influence of parasitic charge at the Si-SiO2 interface on the characteristics of n-channel metal oxide semiconductor field effect transistors (nMOSFETs) scaled down to a feature size of 25 nm is studied. The results are that the impact of parasitic charge on threshold voltage and drain current degradation significantly decreases. Additionally, as the hot-electron injection current densities are lowered for scaled-down nMOS transistors, less charge build-up occurs. This opens the perspective to make use of alternative gate dielectrics even if they have a higher interface trap density. These materials offer the advantage of greater dielectric constants than silicon oxide, so that a physically thicker dielectric will limit the gate tunnelling current.en1362-3060200310607612Taylor & FrancisTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringJournal Article10.1080/00207210310001647222Journal Article