Bergmann, Ole JonathanOle JonathanBergmannBoettcher, TimTimBoettcherVu, HoanHoanVuTrieu, Hoc KhiemHoc KhiemTrieu2025-07-162025-07-162025-09-01Microelectronics Reliability 172: 115833 (2025)https://hdl.handle.net/11420/56215This article presents a model for device failure of power rectifiers during surge current events. A possible failure cause of those devices are exceeding surge currents. Therefore, the detailed understanding of the device behaviour under surge conditions and the related failure mode is essential to achieve and maintain a stable device performance. In this work, the IFSM failure mode is investigated in terms of experimental determination of the failure temperature for rectifier diodes. The failure locations of the stressed devices are determined on the chip and partial-electro-thermal simulations are run to model the temperature distribution. The simulated temperature distribution matches with the analysed failure locations. The failure can be explained by local thermal runaway for PN as well as Schottky diodes, if hole injection from the PN junction or the Schottky contact is taken into account.en0026-27142025Elsevierhttps://creativecommons.org/licenses/by/4.0/Failure mode | Hole injection | Local thermal runaway | Minority carrier injection | Surge current (IFSM)Technology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringNatural Sciences and Mathematics::530: PhysicsJournal Articlehttps://doi.org/10.15480/882.1538610.1016/j.microrel.2025.11583310.15480/882.15386Journal Article