Yildirim, Faruk AltanFaruk AltanYildirimMeixner, Ronald M.Ronald M.MeixnerSchliewe, Robert RomanRobert RomanSchlieweBauhofer, WolfgangWolfgangBauhoferGöbel, HolgerHolgerGöbelKrautschneider, WolfgangWolfgangKrautschneider2024-07-102024-07-102006MRS Spring Meeting, 2006 : April 17 - 21, 2006, San Francisco, California, USA. - (Materials Research Society Symposium Proceedings ; vol. 937)978-1-55899-894-0https://hdl.handle.net/11420/48300Solution-processed bottom-gate organic field-effect transistors (OFETs) with different polymeric dielectric materials were produced and characterized. As the active semiconductor layer, regioregular poly(3-hexylthiophene) (rr-P3HT) was used. Dielectric materials of high chemical stability with simple processing conditions were used as gate-insulation in OFETs. Also, the dielectric properties of the polymeric layers were investigated in metal-insulator-metal capacitor structures, where the thicknesses of the films were exactly the same as they were in the OFETs. The specific volume resistivity and dielectric constant values determined were then used to explain the electrical behavior of OFETs. The devices having BCB, SU-8 and NOA74 as dielectric layers exhibited the desired transistor characteristics, whereas the transistors with Avatrel dielectric did not, due to higher gate-leakages. As a result, SU-8 and NOA74 resins were proven to be good candidates for gate-dielectric usage in solution-processed all-polymer OFETs. © 2006 Materials Research Society.enTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringConference Paper10.1557/proc-0937-m10-05Conference Paper