A trench DRAM gain cell for high signal charge at reduced cell area

Krautschneider, WolfgangWolfgangKrautschneiderHofmann, F.F.Hofmann2024-06-212024-06-212001In: Proceedings of the 31st European Solid-State Device Research Conference : Nuremberg, Germany, 11 - 13 September 2001. - Paris : Frontier Group, 2001. - S. 135-1382914601018https://hdl.handle.net/11420/47995A novel DRAM trench gain cell for high signal charge at a small cell area below 8F2 has been developed. The gain concept allows to decrease significantly the trench depth without sacrifying the cell performance. Demonstrators with full functionality and increased signal charge were processed and experimentally tested. This cell type has the potential for a cell area reduction to 6F2 and further down to 4F2 and less.enTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringA trench DRAM gain cell for high signal charge at reduced cell areaConference Paper10.1109/ESSDERC.2001.195219Conference Paper