Yildirim, Faruk AltanFaruk AltanYildirimSchliewe, Robert RomanRobert RomanSchlieweBauhofer, WolfgangWolfgangBauhoferMeixner, Ronald M.Ronald M.MeixnerGöbel, HolgerHolgerGöbelKrautschneider, WolfgangWolfgangKrautschneider2024-06-212024-06-212008-02Organic Electronics 9 (1): 70-76 (2008-02)https://hdl.handle.net/11420/47988This paper presents a detailed characterization of different thermosetting polymers to be used as gate dielectrics in organic thin-film transistors. Selected materials yield smooth films with good insulation properties and offer attractive processing conditions. Bottom-gate transistors were prepared using these dielectrics and compared to hybrid transistors with surface-treated SiO2 as the dielectric. Gate bias induced leakage and solvent effects were investigated by preparing metal/insulator/semiconductor devices. Poly(3-hexylthiophene) (P3HT) transistors with organic dielectrics exhibited higher channel conductivity and lower mobility values with respect to P3HT-hybrid transistors and pentacene transistors. The importance of dielectric/semiconductor interface was discussed by comparing the performances of pentacene and P3HT transistors produced on different dielectrics.en1566-1199200817076Elsevier ScienceInterfaceOrganic thin-film transistorP3HTPolymer dielectricSolventsTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringJournal Article10.1016/j.orgel.2007.09.005Journal Article