Duan, XiaominXiaominDuanDahl, DavidDavidDahlNdip, Ivan N.Ivan N.NdipLang, Klaus-DieterKlaus-DieterLangSchuster, ChristianChristianSchuster2020-03-092020-03-092015-11-25IEEE Transactions on Components, Packaging and Manufacturing Technology 1 (6): 7337412, 117-125 (2016-01-01)http://hdl.handle.net/11420/5250This paper presents a novel multipole expansion method for the rigorous analysis of wave propagation along a through-silicon-via (TSV) pair. TSV models are often constructed using equivalent circuits under the assumption that the interfaces between different media are equipotential. In comparison with that, the proposed method is a rigorous full-wave solution of the propagation mode. It takes advantage of cylindrical wave expansion functions and matches the boundary conditions at both the metal-to-insulator and insulator-to-silicon interfaces exactly. The method is validated against a full-wave finite-element method solver, and analysis examples using the method are demonstrated in a frequency range up to 100 GHz.en2156-395020151117125IEEECylindrical wave functionmultipole expansion method (MEM)through-silicon-via (TSV).TechnikJournal Article10.1109/TCPMT.2015.2497466Other