Przyrembel, G.G.PrzyrembelKrautschneider, WolfgangWolfgangKrautschneiderSoppa, Winfried M.Winfried M.SoppaWagemann, Hans GüntherHans GüntherWagemann2024-06-192024-06-191987In: Giovanni Soncini, Pier Ugo Calzolari (Hrsg.): Solid state devices : proceedings of the 17th European Solid State Device Research Conference, ESSDERC '87, Bologna, Italy, 14-17 September 1987. - Amsterdam ; New York ; New York, N.Y., U.S.A : North-Holland ; Sole distributors for the U.S.A. and Canada, Elsevier Science Pub. Co, 1988. - S. 687-69004447047799780444704771https://hdl.handle.net/11420/47917In this paper we present a modified charge pumping technique to obtain the energy dependence of interface states of MOSFETs. The steps of gate potential shift periodically between 3 voltage levels. The duration of the gate-mid-level VGMIDgives a precise control of the electron and hole emission times avoiding to generate and measure transition times of trape-zoidal pulses. Furthermore an extension of charge pumping measurements on chains of MOSFETs in parallel is realized. CV measurements at varactors of the same testchip are evaluated and compared to the results of the charge pumping technique.enTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringConference Paperhttps://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5436737Conference Paper