Ziegler, MartinMartinZieglerOberländer, M.M.OberländerSchröder, DietmarDietmarSchröderKrautschneider, WolfgangWolfgangKrautschneiderKohlstedt, HermannHermannKohlstedt2024-05-242024-05-242012-12-24Applied Physics Letters 101 (26): 263504 (2012)https://hdl.handle.net/11420/47589A memristive operation mode of a single floating gate transistor is presented. The device resistance varied accordingly to the charge flow through the device. Hysteretic current-voltages including a resistance storage capability were observed. These experimental findings are theoretically supported by a capacitive based model. The presented two-terminal MemFlash-cell can be considered as a potential substitute for any memristive device (especially for reconfigurable logic, cross-bar arrays, and neuromorphic circuits) and is basically compatible with current Si-fabrication technology. The obvious trade-off between a memristive device based on a state-of-the-art silicon process technology and power consumption concerns will be discussed. © 2012 American Institute of Physics.en0003-6951201226American Institut of PhysicsTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringJournal Article10.1063/1.4773300Journal Article