Meixner, Ronald M.Ronald M.MeixnerYildirim, Faruk AltanFaruk AltanYildirimSchliewe, Robert RomanRobert RomanSchlieweGöbel, HolgerHolgerGöbelBauhofer, WolfgangWolfgangBauhoferKrautschneider, WolfgangWolfgangKrautschneider2024-06-252024-06-252005-12-01In: Proceedings of Polytronic 2005, 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics : October 23 - 26, 2005, Hotel Mercure Panorama, Wroclaw, Poland. - Piscataway, NJ : IEEE Operations Center, 2005. - S. 197-19907803955309780780395534https://hdl.handle.net/11420/48043We report a low-temperature process to manufacture an all polymer thin-film transistor avoiding curing and annealing temperatures higher than 80°C. This aspect of energy efficiency directly supports the low-cost feature of organic devices in fabrication. The process is being demonstrated by using commercially available polymers such as poly(ethylenedioxythiophene)/ polystyrenesulfonate dispersion representing the source, drain and gate electrode, Norland optical adhesive NOA 75 as the gatedielectric and regioregular poly(3-hexylthiophene-2,5-diyl) as the semiconducting polymer - all on a polyvinyl chloride substrate. Functional devices with a channel length of 25 urn and a channel width of 1 mm to 5 mm have been realized. © 2005 IEEE.enLow-temperature processOrganic TFTTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringConference Paper10.1109/POLYTR.2005.1596518Conference Paper