Meixner, Ronald M.Ronald M.MeixnerGöbel, HolgerHolgerGöbelQui, HaidiHaidiQuiUcurum, CihanCihanUcurumKlix, WilfriedWilfriedKlixStenzel, RolandRolandStenzelYildirim, Faruk AltanFaruk AltanYildirimBauhofer, WolfgangWolfgangBauhoferKrautschneider, WolfgangWolfgangKrautschneider2024-06-212024-06-212008-07-01IEEE Transactions on Electron Devices 55 (7): 1776-1781 (2008-07)https://hdl.handle.net/11420/47976A PSPICE model for organic thin-film transistors (OFETs) employing poly(3-hexylthiophene-2,5-diyl) (P3HT) is derived. This model is based on the standard MOSFET Berkeley Short-channel IGFET Model equations, where the voltage dependences of the charge carrier mobility and the bulk conductivity are modeled by additional voltage-controlled current sources. The model requires only five additional parameters, which can be extracted from the output characteristics of the device. The model equations have been verified by device simulations, and the simulation results have been compared with measurements of P3HT OFETs. © 2008 IEEE.en1557-9646IEEE transactions on electron devices2008717761781IEEECompact modelOrganic thin-film transistors OFETs)Poly(3-hexylthiophene) (P3HT)SPICETechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringA physical-based PSPICE compact model for poly(3-hexylthiophene) organic field-effect transistorsJournal Article10.1109/TED.2008.925339Journal Article