Böschke, Tim S.Tim S.BöschkeGovindarajan, S.S.GovindarajanFachmann, ChristianChristianFachmannHeitmann, JohannesJohannesHeitmannAvellan, AlejandroAlejandroAvellanSchröder, Uwe PaulUwe PaulSchröderKudelka, StephanStephanKudelkaKirsch, Paul D.Paul D.KirschKrug, CristianoCristianoKrugHung, Pui YeePui YeeHungSong, SeungchulSeungchulSongJu, Byung-sunByung-sunJuPrice, Jimmy M.Jimmy M.PricePant, Gaurang K.Gaurang K.PantGnade, Bruce E.Bruce E.GnadeKrautschneider, WolfgangWolfgangKrautschneiderLee, Byoung-hunByoung-hunLeeJammy, RajaraoRajaraoJammy2024-06-252024-06-2520062006 International Electron Devices Meeting, San Francisco, CA, USA, 2006, pp. 1-4, art. no. 41544461-4244-0438-X1-4244-0439-8https://hdl.handle.net/11420/48068We show for the first time that control of the crystalline phases of HfO2 by tetravalent (Si) and trivalent (Y,Gd) dopants enables significant improvements in the capacitance equivalent thickness (CET) and leakage current in capacitors targeting deep trench (DT) DRAM applications. By applying these findings, we present a MIM capacitor meeting the requirements of the 40 nm node. A CET <1.3 nm was achieved at the deep trench DRAM thermal budget of 1000°C.enTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringConference Paper10.1109/IEDM.2006.347011Conference Paper