Hajo, Ahid S.Ahid S.HajoYilmazoglu, OktayOktayYilmazogluDadgar, ArminArminDadgarKuppers, FrankoFrankoKuppersKusserow, ThomasThomasKusserow2021-06-032021-06-032020-11-08International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020)http://hdl.handle.net/11420/9676In this paper, we report the fabrication and characterization of a THz Gunn source based on Gallium Nitride (GaN) with side-contact and field-plate technologies. This source works stable at operating voltages up to 20 V due to good passivation layer and good heat sink to the GaN substrate. The GaN-based Gunn diode has relatively high forward current of 0.9 A and a high current drop of about 50 mA for higher frequency and output power.enConference Paper10.1109/IRMMW-THz46771.2020.9370977Other