Voß, HeinrichHeinrichVoßBetcke, MartaMartaBetcke2005-12-132005-12-132005-12Preprint. Published in ICCSA 2006: Computational Science and Its Applications - ICCSA 2006 pp 684-693http://tubdok.tub.tuhh.de/handle/11420/53Although self-assembled quantum dots are grown on wetting layers, most simulations exclude the wetting layer. The neglected effects on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix are investigated based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and a finite height hard-wall 3D confinement potential. By comparing quantum dots with wetting layers and a dot without a wetting layer, we find that the presence of a wetting layer may effect the electronic structure essentially.dehttp://rightsstatements.org/vocab/InC/1.0/quantum dotelectronic structureelectron statescomputer simulationnonlinear eigenproblemMathematikPreprint2005-12-13urn:nbn:de:gbv:830-opus-106010.15480/882.51QuantenpunktElektronenzustandComputersimulationNichtlineares EigenwertproblemEigenvalues, eigenvectors11420/5310.1007/11751540_7210.15480/882.51930767825Preprint