Avellán Hampe, AlejandroAlejandroAvellán HampeMiranda, EnriqueEnriqueMirandaSell, BenBenSellSchröder, DietmarDietmarSchröderKrautschneider, WolfgangWolfgangKrautschneider2024-06-212024-06-212002In: Proceedings of the 32nd European Solid-State Device Research Conference : Firenze, Italy, 24 - 26 September 2002 ; [jointly organized with the European Solid-State Circuits Conference, ESSCIRC 2002] . - Bologna : Univ., 2002. - S. 463-4668890084782https://hdl.handle.net/11420/48003I-V curves as a function of temperature of broken down n- and p-type MOS capacitors with different oxide thicknesses are presented. In accumulation, a crossover of the temperature dependent curves is observed. At low voltages the hard breakdown current increases with temperature whereas it decreases with temperature for higher voltages. This behaviour can be straightforwardly linked to the available charge for conduction at the electrodes. MINIMOS simulations as well as theoretical considerations were performed that clearly support this idea.enTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringConference Paper10.1109/ESSDERC.2002.194968Conference Paper