Compact Transformerless K-Band PA with more than 33% PAE and 14.8 dBm Output Power in 65 nm Bulk CMOS

Vehring, SönkeSönkeVehringBöck, GeorgGeorgBöck2019-03-182019-03-182018-122018 25th IEEE International Conference on Electronics Circuits and Systems, ICECS 2018: 25-28 (2018-12)http://hdl.handle.net/11420/2192This paper presents a compact transformerless balanced power amplifier. The amplifier uses high-Q inductors and capacitors as matching elements instead of lossy transformers. Consequently, higher PAE and output power can be obtained than comparable state-of-the-art. For verification of the design approach a K-band power amplifier in 65 nm bulk CMOS with 33.8% PAE and 14.8 dBm output power is demonstrated. The chip draws 71.8 mA from a 1.2 V supply with 0 dBm input power and has a size of 0.24 mm 2 including all pads. © 2018 IEEE.enCompact Transformerless K-Band PA with more than 33% PAE and 14.8 dBm Output Power in 65 nm Bulk CMOSConference Paper10.1109/ICECS.2018.8617984Other