Avellán Hampe, AlejandroAlejandroAvellán HampeSchröder, DietmarDietmarSchröderKrautschneider, WolfgangWolfgangKrautschneider2024-06-242024-06-242003-07-01Journal of Applied Physics 94 (1): 703-708 (2003)https://hdl.handle.net/11420/48023The study presents the measurement data of random telegraph signals (RTS) in the gate current of n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) after oxide breakdown. Two types of behavior were observed of the time constants and the relative amplitudes of the signals as a function of gate voltage. A theory is developed relating time constants and relative amplitudes of the fluctuations to the energetic and geometric trap location in the oxide.en0021-8979Journal of applied physics20031703708American Institute of PhysicsTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringModeling random telegraph signals in the gate current of metal-oxide-semiconductor field effect transistors after oxide breakdownJournal Article10.1063/1.1579134Journal Article