Ucurum, CihanCihanUcurumGöbel, HolgerHolgerGöbelYildirim, Faruk AltanFaruk AltanYildirimBauhofer, WolfgangWolfgangBauhoferKrautschneider, WolfgangWolfgangKrautschneider2024-06-212024-06-212008-11-07Journal of Applied Physics 104 (8): 084501 (2008-10-16)https://hdl.handle.net/11420/47968We have investigated hysteresis in pentacene-based field-effect transistors with SiO2 as gate dielectric. A clear hysteresis behavior in transfer and output characteristics is reported. Measurements show that the observed hysteresis is due to hole trapping in the pentacene film. Long time constants of the trapping/detrapping mechanism are demonstrated through transient measurements. An initialization routine to be performed prior to measurements is proposed to enable reproducible and reliable measurements on pentacene transistors. © 2008 American Institute of Physics.en0021-897920088American Institute of PhysicsTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringJournal Article10.1063/1.2999643Journal Article