Avellán Hampe, AlejandroAlejandroAvellán HampeMiranda, EnriqueEnriqueMirandaSchröder, DietmarDietmarSchröderKrautschneider, WolfgangWolfgangKrautschneider2024-06-252024-06-252004-04-01Microelectronic Engineering 72 (1-4): 136-139 (2004)https://hdl.handle.net/11420/48033The voltage and temperature dependence of the soft breakdown conduction mechanism in ultrathin gate oxides in MOS structures was investigated. Measurements performed on p- and n-type substrate samples with different oxide thicknesses were compared, and the results analyzed within the framework of the quantum point contact model for dielectric breakdown. The model has been extended so as to include the thermal vibrations of the atoms that form the constriction's bottleneck. A new interpretation of the model parameters, in connection with the potential drops distribution, is discussed.en0167-931720041-4136139ElsevierBreakdownGate oxideReliabilitySoft breakdownTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringJournal Article10.1016/j.mee.2003.12.029Journal Article