Meixner, Ronald M.Ronald M.MeixnerWille, RoccoRoccoWilleSchertling, PeterPeterSchertlingGöbel, HolgerHolgerGöbelHarde, HermannHermannHardeSteglich, Karl-HeinzKarl-HeinzSteglichYildirim, Faruk AltanFaruk AltanYildirimBauhofer, WolfgangWolfgangBauhoferKrautschneider, WolfgangWolfgangKrautschneider2024-06-282024-06-282006-12Organic Electronics 7 (6): 586-591 (2006)https://hdl.handle.net/11420/48123This paper presents a process to manufacture all-polymer field effect transistors in a bottom gate configuration where all electrodes - including the gate electrode - are patterned using an excimer laser in combination with a scanning unit. This technique yields channel lengths of 10 μm between the source and the drain electrodes. Being a combination of a scanning and a single shot patterning process it is a promising candidate for an industrial process with a resolution of 10 μm and an operational throughput of at least 6 cm2/s.en1566-119920066586591Elsevier ScienceBottom gateLaser patterningP3HTThin-film transistorsTechnology::621: Applied Physics::621.3: Electrical Engineering, Electronic EngineeringJournal Article10.1016/j.orgel.2006.09.005Journal Article