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An efficient AlGaN/GaN HEMT power amplifier MMIC at K-Band
Publikationstyp
Conference Paper
Date Issued
2012-10
Sprache
English
Institut
TORE-URI
Start Page
131
End Page
134
Article Number
6483753
Citation
European Microwave Integrated Circuits Conference (EuMIC 2012)
Contribution to Conference
Scopus ID
This paper presents an efficient power amplifier MMIC at K-Band (20 GHz) designed for a 0.25 μm AlGaN/GaN HEMT process on three-inch s.i.-SiC substrates. A low-loss network topology is used for second-harmonic output matching to achieve high PAE. The measured amplifier has a maximum PAE of 41% and an associated output power of 31.4dBm when operated at a drain voltage of 20V. At 35V drain voltage, the amplifier exhibits a PAE of 34% and an associated output power of 34 dBm.
Funding(s)
Leistungsverstärker für die Raumfahrt auf GaN Elektronik