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An efficient AlGaN/GaN HEMT power amplifier MMIC at K-Band
Publikationstyp
Conference Paper
Date Issued
2012-10
Sprache
English
Institut
TORE-URI
Start Page
131
End Page
134
Article Number
6483753
Citation
European Microwave Integrated Circuits Conference (EuMIC 2012)
Contribution to Conference
Scopus ID
ISBN of container
978-287487028-6
This paper presents an efficient power amplifier MMIC at K-Band (20 GHz) designed for a 0.25 μm AlGaN/GaN HEMT process on three-inch s.i.-SiC substrates. A low-loss network topology is used for second-harmonic output matching to achieve high PAE. The measured amplifier has a maximum PAE of 41% and an associated output power of 31.4dBm when operated at a drain voltage of 20V. At 35V drain voltage, the amplifier exhibits a PAE of 34% and an associated output power of 34 dBm.
Funding(s)
Leistungsverstärker für die Raumfahrt auf GaN Elektronik