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  4. Multilayer substrate integrated waveguide six-port junctions with embedded resistive films
 
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Multilayer substrate integrated waveguide six-port junctions with embedded resistive films

Citation Link: https://doi.org/10.15480/882.13822
Publikationstyp
Journal Article
Date Issued
2024-11-13
Sprache
English
Author(s)
Tegowski, Bartosz  
Hochfrequenztechnik E-3  
Kölpin, Alexander  orcid-logo
Hochfrequenztechnik E-3  
TORE-DOI
10.15480/882.13822
TORE-URI
https://hdl.handle.net/11420/52298
Journal
International journal of microwave and wireless technologies  
Citation
International Journal of Microwave and Wireless Technologies (in Press): (2024)
Publisher DOI
10.1017/S1759078724000680
Scopus ID
2-s2.0-85209712109
Publisher
Cambridge Univ. Press
This article deals with multilayer substrate integrated waveguide (SIW) six-port junctions with embedded carbon resistive films. SIW six-ports usually employ reactive power dividers, which degrade the amplitude and phase balance when the six-port is terminated with mismatched power detectors. The associated impairments are studied and two SIW six-port junctions with improved isolation and output matching are designed for K-/Ka-band applications to overcome these limitations. The proposed designs differ with respect to the configuration of the output ports making the underlying six-port topology applicable for different layout requirements. Measurements of the fabricated components validate the concept. The six-ports are compact, fully shielded and can be integrated in multilayer printed circuit boards.
Subjects
interferometer | K-band | six-port | substrate integrated waveguide (SIW) | thick-film resistor
DDC Class
621.3: Electrical Engineering, Electronic Engineering
Lizenz
https://creativecommons.org/licenses/by/4.0/
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