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Simultaneous large-scale reliability analysis of ultra-thin MOS gate dielectrics using an automated test system
Citation Link: https://doi.org/10.15480/882.2332
Publikationstyp
Journal Article
Date Issued
2008-05-26
Sprache
English
Institut
TORE-DOI
TORE-URI
Journal
Volume
6
Start Page
205
End Page
207
Citation
Advances in Radio Science (6): 205-207 (2008)
Publisher DOI
Scopus ID
Publisher
Copernicus Publications
This article presents an automated test system targeting the large-scale analysis of ultra-thin MOS gate dielectric degradation. The system allows for stress tests at elevated temperatures as well as supply voltages and long-term tests of thousands of MOS devices simultaneously. The aim is to build-up large and hence significant statistics about the degradation process as a function of time. © Author(s) 2008.
DDC Class
600: Technik
620: Ingenieurwissenschaften
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