A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT

Publikationstyp
Conference Paper
Date Issued
2016-12-07
Sprache
English
Author(s)
Feuerschütz, Philip  
Friesicke, Christian  
Quay, Rüdiger  
Jacob, Arne  
Institut
Hochfrequenztechnik E-3  
TORE-URI
http://hdl.handle.net/11420/4888
Start Page
305
End Page
308
Article Number
7777551
Citation
EuMIC 2016 - 11th European Microwave Integrated Circuits Conference: 7777551 (2016-12-07)
Contribution to Conference
EuMIC 2016 - 11th European Microwave Integrated Circuits Conference  
Publisher DOI
10.1109/EuMIC.2016.7777551
Scopus ID
2-s2.0-85010310998
The next generation of satellite communication systems at Q/V-band increases the need for highly performing MMIC technology. Gallium nitride high electron mobility transistors (GaN HEMTs) can provide high power density even at millimeter wave frequencies. Targeting a band of 35-40 GHz, a power amplifier MMIC using second-harmonic input and output matching is designed, manufactured, and measured. The presented single-transistor MMIC exhibits a small-signal gain of more than 9 dB at 38 GHz and delivers 269 mW (24.3 dBm) of output power at 38 GHz, which results in a power density of over 1.2 W/mm. The amplifier shows a drain efficiency of up to 33 % and a power-added efficiency (PAE) of up to 22 %.
Subjects
Gallium nitride
millimeter wave integrated circuits
Q-band
satellite communication