K-band power amplifiers in a 100 nm GaN HEMT microstrip line MMIC technology

Publikationstyp
Conference Paper
Date Issued
2014-06
Sprache
English
Author(s)
Friesicke, Christian  
Jacob, Arne  
Quay, Rüdiger  
Institut
Hochfrequenztechnik E-3  
TORE-URI
http://hdl.handle.net/11420/8327
Start Page
295
End Page
298
Article Number
06899877
Citation
20th International Conference on Microwaves, Radar and Wireless Communications (MIKON 2014)
Contribution to Conference
20th International Conference on Microwaves, Radar and Wireless Communications, MIKON 2014  
Publisher DOI
10.1109/MIKON.2014.6899877
Scopus ID
2-s2.0-84908637471
This paper presents two power amplifier MMICs which are designed for operation at K-band (19 GHz). They are realized using a 100nm AlGaN/GaN HEMT technology which, in addition to coplanar lines, supports microstrip lines to cover the needs of applications between X- and Ka-band frequencies. The presented MMICs are among the first power amplifiers designed with the microstrip library and are used to evaluate the technology's performance at K-band. Both amplifiers are single-stage designs, where one uses only a single 8×75 μm HEMT cell and the other one uses two cells with power-combining. In large-signal measurements, the amplifiers reached, respectively, peak efficiencies of 36% and 38% associated with output powers of 0.93W and 1.48W and drain efficiencies of 61% and 51%.
Subjects
Gallium nitride
high power amplifiers
K-band
MMICs
satellite communication
Funding(s)
Leistungsverstärker für die Raumfahrt auf GaN Elektronik