Impact-ionization effects on the high-frequency behavior of HFETs

Publikationstyp
Journal Article
Date Issued
2004-03-15
Sprache
English
Author(s)
Isler, Mark  
Schünemann, Klaus  
Institut
Hochfrequenztechnik E-3  
TORE-URI
http://hdl.handle.net/11420/11315
Journal
IEEE transactions on microwave theory and techniques  
Volume
52
Issue
3
Start Page
858
End Page
863
Citation
IEEE Transactions on Microwave Theory and Techniques 52 (3): 858-863 (2004-03-01)
Publisher DOI
10.1109/TMTT.2004.823553
Scopus ID
2-s2.0-12144289246
A new small-signal equivalent-circuit model is presented, which takes into account strong impact-ionization effects on the high-frequency behavior of heterostructure field-effect transistors (HFET). The proposed model overcomes the limitations of previous models and includes the bipolar action of the space charge of holes generated by impact ionization. It is shown that the developed model is capable of explaining the anomalous high-frequency behavior of HFETs with channels of high indium content.
Subjects
Breakdown
Circuit modeling
Heterostructure field-effect transistors (HFETs)
Impact ionization
Small signal
DDC Class
600: Technik