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Understanding and modeling of diode voltage overshoots during fast transient ESD events
Publikationstyp
Journal Article
Date Issued
2014-06-27
Sprache
English
Author(s)
Pan, Zhihao
Holland, Steffen
Volume
61
Issue
8
Start Page
2682
End Page
2689
Article Number
6845319
Citation
IEEE Transactions on Electron Devices 61 (8): 2682-2689 (2014)
Publisher DOI
Scopus ID
Publisher
IEEE
Diodes in forward direction exhibit excellent ESD ruggedness and are thus widely used in both discrete and on-chip electro-static discharge (ESD) protection devices. Due to the conductivity modulation under an ESD stress, a transient voltage overshoot is observed at the beginning of a fast discharge event. Since the voltage overshoot can be harmful, understanding the origin of the overshoot is crucial to design optimized protection diodes. In this paper, it will be shown that existing models can result in much underestimated overshoot voltage, especially for diodes with a large lowly doped region. This can be attributed to the negligence of transient charge distribution in the lowly doped region. A new model that takes this effect into account as well as impact-ionization is presented.
Subjects
Conductivity modulation
electro-static discharge (ESD)
modeling
voltage overshoot.
DDC Class
621.3: Electrical Engineering, Electronic Engineering