The influence of proximity effects in electron beam lithography on integrated photonic systems

Testing and improving integrated photonic components and systems requires rapid prototyping of various design variations. Electron beam lithography enables such rapid prototyping, allowing adjustments on a run-to-run basis with minimum linewidths on the order of 10 nm. Process variations arising from focusing, stitching, and proximity effects can impact the fidelity of fabricated designs. These variations can be minimized by applying design-based or dose-based proximity correction schemes. In this work, both correction methods are applied to integrated photonic systems containing a microring resonator and uniform and apodized grating couplers fabricated on deposited silicon test samples. Their transmission spectra are experimentally measured and compared to theoretical predictions to evaluate the effectiveness of the proximity correction schemes.

Subjects

Deposited silicon

Electron beam lithography

Fabrication process variations

Grating couplers

Integrated photonics

Microring resonators

Silicon photonics

DDC Class

621.3: Electrical Engineering, Electronic Engineering

621: Applied Physics

Lizenz

https://creativecommons.org/licenses/by/4.0/

Publication version

publishedVersion

Name

1-s2.0-S2590007226000092-main.pdf

Type

Main Article

Size

3.7 MB

Format

Adobe PDF

Options

The influence of proximity effects in electron beam lithography on integrated photonic systems